| PART |
Description |
Maker |
| V54C3128164VCLK75HPC V54C3128804VCLK75EPC V54C3128 |
8M X 16 SYNCHRONOUS DRAM, PBGA54
16M X 8 SYNCHRONOUS DRAM, PBGA54
32M X 4 SYNCHRONOUS DRAM, PBGA54
|
PROMOS TECHNOLOGIES INC
|
| HY5V26CF HY5V26CF-6 HY5V26CF-8 HY5V26CF-H HY5V26CF |
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
4 Banks x 2M x 16bits Synchronous DRAM
SDRAM - 128Mb
|
HYNIX SEMICONDUCTOR INC
|
| M12L64164A-5BG |
1M x 16 Bit x 4 Banks Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PBGA54
|
Elite Semiconductor Memory Technology, Inc.
|
| IS42VM16400K-6BLI |
SYNCHRONOUS DRAM, PBGA54
|
INTEGRATED SILICON SOLUTION INC
|
| M12L128168A-7BG |
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
|
| HY5V26ELF-5I |
8M X 16 SYNCHRONOUS DRAM, 4.5 ns, PBGA54
|
HYNIX SEMICONDUCTOR INC
|
| NT5SE8M16DF-6K |
8M X 16 SYNCHRONOUS DRAM, 5 ns, PBGA54 0.80 MM PITCH, BGA-54
|
Nanya Technology, Corp.
|
| K4M51163LC-RN75 K4M51163LC-RG75 K4M51163LC-RF1H K4 |
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4M64163PK K4M64163PK-BE75 K4M64163PK-RE75 K4M6416 |
4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 100万16 × 4银行4FBGA移动SDRAM
|
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL |
2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM）的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
|
Toshiba Corporation
Toshiba, Corp.
|
