| PART |
Description |
Maker |
| ISA2188AU1 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INC1001AC1 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corpora...
|
| 2SC6120 2SC612010 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SJ512 EE08200 |
HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION
From old datasheet system
|
Toshiba
|
| 2SJ439 |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| BC808F |
PNP Silicon Transistor (High current application Switching application)
|
AUK[AUK corp]
|
| BC807 |
PNP Silicon Transistor (High current application Switching application)
|
AUK corp
|
| BC818F |
NPN Silicon Transistor (High current application Switching application)
|
AUK[AUK corp]
|
| BC807F |
PNP Silicon Transistor (High current application Switching application)
|
AUK[AUK corp]
|
