| PART |
Description |
Maker |
| 2SA812 |
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
|
TY Semiconductor Co., Ltd
|
| 2SA1434 |
Adoption of FBET process. High DC current gain (hFE=500 to 1200).
|
TY Semiconductor Co., L...
|
| 2SB736A |
Micro package. Complementary to 2SD780A. High DC Current Gain: hFE = 200 TYP.
|
TY Semiconductor Co., Ltd
|
| 2SC4705 |
High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage
|
TY Semiconductor Co., L...
|
| GM9014 |
Excellent HFE Linearity HFE : HFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
| 2SC4738 |
High voltage and high current:VCE=50V,IC=150mA(Max.) High hFE: =120 to 700
|
TY Semiconductor Co., L...
|
| 2SC3439 |
High hFE=400 to 1800. High collector current (Icm=3A,Ic=1.5A) Small package for mounting.
|
TY Semiconductor Co., Ltd
|
| BCP68-10 BCP68-16 Q62702-C2126 Q62702-C2128 Q62702 |
From old datasheet system
NPN Silicon AF Transistor (For general AF application High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BDP948 BDP950 Q62702-D1338 Q62702-D1336 |
From old datasheet system
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| 2SB1169A |
High forward current transfer ratio hFE which has satisfactory linearity.
|
TY Semiconductor Co., Ltd
|
| BC878 BC880 |
PNP Silicon Darlington Transistors (High current gain High collector current)
|
Siemens Semiconductor Group
|
| C62702-C941 C62702-C942 C62702-C943 |
PNP Silicon Darlington Transistors (High current gain High collector current)
|
SIEMENS AG
Siemens Semiconductor Group
|
