| PART |
Description |
Maker |
| 2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
| 2SC3295 |
High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High voltage: VCEO = 50 V.
|
TY Semiconductor Co., L...
|
| 2SC2881 |
Voltage Amplifier Applications
High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz(typ.)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SA812 |
High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) High Voltage: VCEO = -50 V
|
TY Semiconductor Co., Ltd
|
| 2SB1220 |
High collector-emitter voltage VCEO Low noise voltage NV
|
TY Semiconductor Co., Ltd
|
| 2SB805 |
High collector to emitter voltage: VCEO -100V.
|
TY Semiconductor Co., Ltd
|
| CP756 |
0.750W High Voltage PNP Plastic Leaded Transistor. 200V Vceo, 0.500A Ic, 40 hFE.
|
Continental Device India Limited
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| HER301 HER305 HER302 HER303 HER304 |
HIGH EFFICIENCY RECTIFIERS(3.0A,50-400V)
HIGH EFFICIENCY RECTIFIERS(3.0A/50-400V)
28000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
MOSPEC[Mospec Semiconductor]
MOSPEC SEMICONDUCTOR CORP.
|
| APT4016BN APT4018BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
POWER MOS IV 400V 31.0A 0.16 Ohm / 400V 29.0A 0.18 Ohm
|
http://
Advanced Power Technology
|
| 2SA1812 2SA1776 2SA1727 A1776 |
High-voltage Switching Transistor (-400V, -0.5A)
|
ROHM[Rohm]
|
