PART |
Description |
Maker |
Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
CFY30 Q62703-F97 |
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105 GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz) From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫,600 W/700 W连续,分之为重点,高功率增益 6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN 6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp. NEC[NEC]
|
CGB7001-SC07 CGB7001-SC PB-CGB7001-SC-0000 CGB7001 |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER DC-6.0 GHz InGaP HBT Packaged Matched Gain Block Amplifier
|
Mimix Broadband, Inc.
|
CGB7005-SC07 PB-CGB7005-SC-0000 CGB7005-SC-0G00 CG |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER DC-6.0 GHz InGaP HBT Packaged Matched Gain Block Amplifier
|
Mimix Broadband, Inc.
|
TQP369185 TQP369185-PCB |
DC-6 GHz Gain Block
|
TriQuint Semiconductor
|
HMC997LC4 |
Variable Gain Amplifier 17 to 27 GHz
|
Hittite Microwave Corporation
|
CHA4861-QGG |
6-11 GHz Variable Gain Amplifier
|
United Monolithic Semiconductors
|
TA020-180-70-17 |
2 - 18 GHz 70dB Gain Amplifier
|
Transcom, Inc.
|