| PART |
Description |
Maker |
| N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16
16M X 8 FLASH 3V PROM, PBGA24
128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|
| MX25L1605AM2I-12 MX25L1605AMC-12 MX25L1605AMC-15 |
16M X 1 FLASH 2.7V PROM, PDSO8
16M X 1 FLASH 2.7V PROM, PDSO16
|
MACRONIX INTERNATIONAL CO LTD
|
| K8F5715ETM-SC1C0 K8F5715ETM-DE1F0 K8F5715ETM-FC1E0 |
16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44
16M X 16 FLASH 1.8V PROM, 100 ns, PBGA88
|
|
| S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc.
SPANSION LLC
|
| MBM29DL161BE-90PBT MBM29DL161BE-70TR MBM29DL161BE- |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| MBM29F017A-12 MBM29F017A-12PFTR MBM29F017A-70 MBM2 |
CAT5E PATCH CORD, 20FT ORANGE, MOLDED 1,600米8）位
16M (2M X 8) BIT 2M X 8 FLASH 5V PROM, 90 ns, PDSO40
16M (2M X 8) BIT 2M X 8 FLASH 5V PROM, 70 ns, PDSO40
CAT5E PATCH CORD, 100FT ORANGE, MOLDED
2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-PDIP -40 to 85
CAT 5E BULK CABLE 100 MHZ,SHLD,PVC-BLUE
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MBM29LV160T-80PFTR MBM29LV160B-12PFTR MBM29LV160B- |
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PDSO48
FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Spansion, Inc.
|
| E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器（J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器（J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
|
Intel, Corp.
Intel Corp.
http://
Intel Corporation
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M58LT256JST8ZA6F |
16M X 16 FLASH 1.8V PROM, 85 ns, PBGA64
|
STMICROELECTRONICS
|
| M25P128-VME6P |
16M X 8 FLASH 2.7V PROM, PDSO8
|
STMICROELECTRONICS
|
| AM29LV256ML101PCI |
16M X 16 FLASH 3V PROM, 100 ns, PBGA64
|
SPANSION LLC
|
