PART |
Description |
Maker |
K9GAG08U0F |
16Gb F-die NAND Flash
|
Samsung
|
MT29F8G08DAAWCA MT29F8G08BAAWPA |
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory 1G X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Micron Technology
|
K9HDG08U5A K9GBG08U0A K9LCG08U1A |
32Gb A-die NAND Flash
|
Samsung
|
K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC 8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor] Samsung Electronics Inc
|
K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V 512Mb/256Mb 1.8V NAND Flash Errata 64M x 8 bit NAND flash memory, 1.70 - 1.95V 32M x 16 bit NAND flash memory, 2.7 - 3.6V 32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory 512K x 8 bit NAND Flash Memory
|
Samsung semiconductor Samsung Electronic
|
AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F |
1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30 Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30 LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1
|
ADVANCED MICRO DEVICES INC PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
|
DSK9K1208U0A K9K1208U0A-YCB0 K9K1208U0A-YIB0 DS_K9 |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory TV 16C 16#16 SKT RECP 6400 × 8位NAND闪存 64M x 8 Bit NAND Flash Memory Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
M28R400CT100D16 M28R400CT-KGD M28R400CB100D16 M28R |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知良品裸片4兆位56Kb的x16插槽,引导块.8V电源快闪记忆 KNOWN GOOD DIE 4 MBIT (256KB X16) 1.8V SUPPLY FLASH MEMORY
|
STMicroelectronics N.V. http:// ST Microelectronics
|
HY27LF081G2M-TCP HY27LF081G2M-TCS HY27LF161G2M-TCB |
Inductor; Inductor Type:Power; Inductance:2uH; Inductance Tolerance: 25 %; Series:CTX; Package/Case:PCB Surface Mount; Core Material:Amorphous Metal; Current, lt rms Parallel:7.26A; Current, lt rms Series:3.63A RoHS Compliant: Yes 3.3V Differential Transceiver 8-PDIP -40 to 85 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 128M X 8 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 128M X 8 FLASH 3.3V PROM, 30 ns, PDSO48 CONNECTOR ACCESSORY 64M X 16 FLASH 1.8V PROM, 30 ns, PDSO48 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.2"; Tip/Nozzle Size:0.40 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 COILTRONICS RoHS Compliant: Yes 1Gbit的(128Mx8bit / 64Mx16bit)NAND闪存 Power Heater Soldering Tip; Tip/Nozzle Style:Chisel; Tip/Nozzle Thickness:0.1"; Tip/Nozzle Size:0.43 RoHS Compliant: Yes 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|