| PART |
Description |
Maker |
| RJK03P0DPA RJK03P0DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0236DPA RJK0236DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0206DPA-00-J5A RJK0206DPA13 |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N3DPA |
30V, 35A, 4.7m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MCH5810 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC / DC Converter Applications
|
Sanyo Semicon Device
|
| MCH5823 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| FDMQ8203 |
100V Dual N-Channel and Dual P-Channel PowerTrenchMOSFET, GreenBridgeSeries of High-Efficiency Bridge Rectifiers
GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench? MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ
|
Fairchild Semiconductor
|
| SDK02 |
Sink Driver Array With Built-in Flywheel Diode
N-channel With built-in flywheel diode
|
SANKEN[Sanken electric]
|
