| PART |
Description |
Maker |
| TSC607-ZPPACKOF10 TSC506-ZP |
IC FLEX 10KE FPGA 200K 600-BGA
780-pin FineLine BGA BEFESTIGUNGSKLAMMER多珀0ST
|
OSRAM GmbH
|
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| FDZ4670 |
N-Channel PowerTrench?MOSFET BGA 30V, 25A, 2.5mΩ
N-Channel PowerTrench㈢MOSFET BGA 30V, 25A, 2.5mヘ
|
Fairchild Semiconductor
|
| FDZ291P06 FDZ291P |
P-Channel 1.5 V Specified PowerTrench? BGA MOSFET
P-Channel 1.5 V Specified PowerTrench㈢ BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IS61NVF102418-6.5B2 IS61NVF25672-6.5B1 IS61NVF5123 |
1M X 18 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 72 ZBT SRAM, 6.5 ns, PBGA209 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
512K X 36 ZBT SRAM, 6.5 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 72 ZBT SRAM, 7.5 ns, PBGA209
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| IBM25PPC440GP-3CC400E IBM25PPC440GP-3CC400C IBM25P |
32-BIT, 400 MHz, RISC PROCESSOR, CBGA552 25 X 25 MM, CERAMIC, BGA-552
32-BIT, 400 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552
32-BIT, 466 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552
32-BIT, 500 MHz, RISC PROCESSOR, PBGA552 25 X 25 MM, FLIP CHIP, PLASTIC, BGA-552
|
Applied Micro Circuits, Corp.
Electronic Theatre Controls, Inc.
|
| IBM25PPC405EP-3GB200C IBM25PPC405EP-3GB133C IBM25P |
32-BIT, 200 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 133.33 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 333.33 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
32-BIT, 266.66 MHz, RISC PROCESSOR, PBGA385 31 MM, ENHANCED, PLASTIC, BGA-385
|
Electronic Theatre Controls, Inc.
|
| GDPXA255A0C400 GDPXA255A0E200 GDPXA255A0C200 GDPXA |
32-BIT, 400 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
32-BIT, 200 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
32-BIT, 300 MHz, MICROPROCESSOR, PBGA256 17 X 17 MM, 1.75 MM HEIGHT, PLASTIC, BGA-256
|
Intel, Corp.
INTEL CORP
|
| FDZ294N |
N-Channel 2.5V Specified PowerTrench® BGA MOSFET
N-CHANNEL 2.5 V SPECIFIED POWERTRENCH BGA MOSFET
|
Fairchild Semiconductor
|
| US115T US115TE US112 US112T US112E US211 US211E US |
Analog IC
Intel® LXT16726 DeMUX, 132-pin BGA, Tray
Intel® LXT16726 DeMUX, 142-pin BGA, Tray
|
|
| IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S20 |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
|
Integrated Device Technology, Inc.
|
| K7P401822B-HC16 K7P401822B-HC20 K7P401822B-HC25 K7 |
SENSOR DIFF VACUUM GAGE 10 H2O 128K × 36
128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128K × 36
256K X 18 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
128K X 36 STANDARD SRAM, 2.7 ns, PBGA119 14 X 22 MM, BGA-119
256K X 18 STANDARD SRAM, 3 ns, PBGA119 14 X 22 MM, BGA-119
SENSOR DIFF VACUUM GAGE 1PSI
SENSOR ABSOLUTE 0-15PSIA
128Kx36 & 256Kx18 Synchronous Pipelined SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
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