| PART |
Description |
Maker |
| 2SA1411 |
Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V
|
TY Semiconductor Co., Ltd
|
| 2SC3114 |
NPN Epitaxial Planar Silicon Transistors for High-VEBO, AF Amp Applications(用于高发射级电压AF放大器应用的NPN硅外延平面型晶体
|
Sanyo Electric Co.,Ltd.
|
| FJP5027 FJP5027TU FJP5027R FJP5027RTU |
Wide SOA
High Speed Switching
High Voltage and High Reliability
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| WP06R WP06R12D05 WP06R12D12 WP06R12D15 WP06R12S05 |
High Density 5-6 Watt Wide Input Range DC/DC Converter
5-6 WATT HIGH DENSITY, WIDE INPUT RANGE DC/DC CONVERTER
5-6 WATT HIGH DENSITY/ WIDE INPUT RANGE DC/DC CONVERTER
RECTIFIER SCHOTTKY SINGLE 2A 40V 50A-Ifsm 0.55Vf 0.5A-IR PowerDI-123 3K/REEL
|
CANDD[C&D Technologies]
|
| BCP54-10 BCP56-10 BCP56 |
NPN Medium Power Transistor
High collector current 1.3 W power dissipation. emitter-base voltage VEBO 5 V
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| GBPC2501 GBPC35005 GBPC25005 GBPC25 GBPC2510 GBPC3 |
HIGH CURRENT 15,25,35,AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
Dual General-Purpose Operational Amplifier 8-TSSOP 0 to 70
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
HIGH CURRENT 15,25,35,AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS 大电5,25,35，安培。单相桥式整流器玻璃钝化
ECONOLINE: RSZ/P - 1kVDC ECONOLINE：RSZ / P - 1kVDC 2kVDC隔离UL94V - 0封装材料所需的散热片，无外置。组件所需的环形磁ContinuousShort电路保护 P的后缀
0.8 to 1.8-V 8-A, 12-V Input Non-Isolated Wide-Adjust SIP Module 8-SIP MODULE -40 to 85 大电5,25,35，安培。单相桥式整流器玻璃钝化
1.5 A, Wide Input, Non-Isolated, Wide Negative Output Adjust Module 5-DIP MODULE
10 A 12-V Input Bus Termination Power Module for DDR/QDR Memory 10-DIP MODULE -40 to 85
6-A Wide-Input Voltage Adjustable Switching Regulator 7-DIP MODULE -40 to 85
HIGH CURRENT 15/25/35/AMPS. SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIFIERS
8 A, 3.3-V Input Non-Isolated Wide-Output Adjust w/Auto-Track 8-SIP MODULE -40 to 85
|
Surge Components, Inc.
Shanghai Sunrise Electronics
SURGE[Surge Components]
|
| HF50-12F |
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)) HF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V)(NPN 纭??灏??????朵?绠?Ic:12.0A,Vcbo: 36 V,Vceo: 18 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ADVANCED SEMICONDUCTOR INC
|
| ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR
NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| SST440 |
Wide Band High Gain
|
Micross
|
|
