PART |
Description |
Maker |
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
SUD50N02-06P |
N-Channel MOSFET, 20 V(D-S) , 175°C N-Channel MOSFET, 20 V(D-S) , 175°C N沟道MOSFET0V(D-S),175 From old datasheet system N-Channel 20-V (D-S) 175?MOSFET N-Channel 20-V (D-S) 175掳 MOSFET N-Channel 20-V (D-S) 175?MOSFET
|
Vishay Intertechnology,Inc. Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
UPA1806GR-9JG UPA1806 UPA1806GR-9JG-E1 UPA1806GR-9 |
CONNECTOR ACCESSORY N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N Channel enhancement MOS FET
|
NEC Corp.
|
SUD30N03-30 |
N-Channel 30-V (D-S), 175 DegreeCelcious MOSFET N-Channel Enhancement-Mode Trans
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
UPA1809 UPA1809GR-9JG UPA1809GR-9JG-E1 UPA1809GR-9 |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING N沟道MOS场效应晶体管开 N Channel enhancement MOS FET
|
NEC, Corp. NEC Corp.
|
UPA650TT UPA650TT-E1 UPA650TT-E2 |
P-channel enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|
UPA653TT UPA653TT-E1 UPA653TT-E2 |
P-channel enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC
|