| PART |
Description |
Maker |
| SIHB28N60EF |
EF Series Power MOSFET with Fast Body Diode
|
Vishay Siliconix
|
| BSC050N03MSG |
OptiMOS?? M-Series Power-MOSFET
OptiMOS? M-Series Power-MOSFET
|
Infineon Technologies AG
Infineon Technologies A...
|
| SIHG22N60E13 TO-247AC |
E Series Power MOSFET
E Series Power MOSFET
|
Vishay Siliconix
|
| SIHB12N65E |
E Series Power MOSFET
|
Vishay Siliconix
|
| SIHB12N50E |
E Series Power MOSFET
|
Vishay Siliconix
|
| IRFZ24A |
ADVANCED POWER MOSFET
60V N-Channel Power MOSFET(漏源电压0V的N沟道增强型功率MOS场效应管) 17 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRLM120A IRLM120ATF |
Advanced Power MOSFET
HEXFET Power MOSFET
100V N-Channel Logic Level A-FET
N-CHANNEL MOSFET
|
International Rectifier
FAIRCHILD[Fairchild Semiconductor]
|
| IRFW520A IRFI520A IRFWI520A IRFW520ATM |
Advanced Power MOSFET
N-CHANNEL POWER MOSFET
100V N-Channel A-FET
Advanced Power MOSFET 9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFR5305PBF IRFU5305PBF IRFR5305TRPBF IRFR5305TR I |
Ultra Low On-Resistance
HEXFET㈢ Power MOSFET ( VDSS = -55V , RDS(on) = 0.065ヘ , ID = -31A )
HEXFET? Power MOSFET ( VDSS = -55V , RDS(on) = 0.065Ω , ID = -31A )
31 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| IXTK88N30P IXTT88N30P IXTH88N30P IXTQ88N30P |
PolarHTTM Power MOSFET
88 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
PolarHTTM Power MOSFET
|
IXYS Corporation
|
| 3LP01M |
P-Channel Silicon MOSFET
PicoMOSFET Series
|
SANYO[Sanyo Semicon Device]
|
