| PART |
Description |
Maker |
| R50440TS |
300 A, 400 V, SILICON, RECTIFIER DIODE, DO-205AB
|
MICROSEMI CORP-COLORADO
|
| PPF360M |
N Channel MOSFET; Package: TO-254; ID (A): 14; RDS(on) (Ohms): 0.2; PD (W): 200; BVDSS (V): 400; Rq: 0.63; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| MJE5740G MJE574006 MJE5742G MJE5742 MJE5740 |
NPN Silicon Power Darlington Transistors 8 AMPERES 300?400 VOLTS 80 WATTS
NPN Silicon Power Darlington Transistors 8 AMPERES 300−400 VOLTS 80 WATTS
|
ONSEMI[ON Semiconductor]
|
| AJ60A-048L-120F04 AL80A-048L-063F34 AJ60A-048L-050 |
1-OUTPUT 50 W DC-DC REG PWR SUPPLY MODULE 2.400 X 2.300 INCH, 0.500 INCH HEIGHT, MODULE
1-OUTPUT 240 W DC-DC REG PWR SUPPLY MODULE 2.400 X 4.600 INCH, 0.500 INCH HEIGHT, MODULE
1-OUTPUT 75 W DC-DC REG PWR SUPPLY MODULE 2.400 X 2.300 INCH, 0.500 INCH HEIGHT, MODULE
1-OUTPUT 100 W DC-DC REG PWR SUPPLY MODULE 2.400 X 2.300 INCH, 0.500 INCH HEIGHT, MODULE
1-OUTPUT 150 W DC-DC REG PWR SUPPLY MODULE
|
Cypress Semiconductor, Corp.
Cooper Bussmann, Inc.
TOKO, Inc.
Fox Electronics
|
| MJE5730 MJE5731 MJE5731A |
1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS
|
Motorola, Inc
|
| IRF320-323 IRF321 IRF322 IRF323 IRF320 IRF720 IRF7 |
N-Channel Power MOSFETs, 3.0 A, 350-400 V N沟道功率MOSFET.0甲，350-400 V
TRI N PLUG M 0-48
N-Channel Power MOSFETs/ 3.0 A/ 350-400 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| MURP20040CT MURP20020CT MURP20020CT_06 MURP20020CT |
100 A, 300 V, SILICON, RECTIFIER DIODE
ULTRAFAST RECTIFIERS 200 AMPERES, 200−400 VOLTS
|
ONSEMI[ON Semiconductor]
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| APT30M40LVFR APT30M40B2VFR APT30M40B2VFRG |
Power FREDFET; Package: T-MAX™ [B2]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V FREDFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT40M70JVFR |
53 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: ISOTOP®; ID (A): 53; RDS(on) (Ohms): 0.07; BVDSS (V): 400;
POWER MOS V FREDFET
|
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
|
|
