| PART |
Description |
Maker |
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| EID1112A1-5 |
11.70-12.70 GHz 5-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1414-6 |
14.00-14.50 GHz 6-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| MGFC39V5258 MGFC39V5258A |
5.2-5.8 GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| EID1314A1-8 |
13.75-14.50 GHz 8-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EID1414A1-12 |
14.00-14.50 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1010A-8 |
10.00-10.25 GHz 8-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC2832-2 |
2.80-3.20 GHz 2-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC8596-2 EIC8596-2NH |
8.50-9.60 GHz 2-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
http://
|
| EIC7177-10 |
7.10-7.70 GHz 10-Watt Internally-Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIC1414-12 |
14.0-14.5 GHz 12-Watt Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
