| PART |
Description |
Maker |
| ADP3330ARTZ-2.5-R7 ADP3330ARTZ-3.6-R7 ADP3330ARTZ- |
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 2.5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO6
3.6 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ROHS COMPLIANT, ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
2.75 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
3 V FIXED POSITIVE LDO REGULATOR, 0.23 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
2.5 V FIXED POSITIVE LDO REGULATOR, 0.4 V DROPOUT, PDSO6 ULTRA SMALL, THERMALLY ENHANCED, SOT-23, 6 PIN
|
Analog Devices, Inc.
ANALOG DEVICES INC
|
| STW9C2SA |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
| GTVA220701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| PTFA142401EL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
| GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA092201FV4R0XTMA1 PTFA092201E PTFA092201EF PTFA |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
| PXFC191507FC |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTF240101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400-2700 MHz
|
Infineon Technologies AG
|
| PTFB082817FH |
Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791-821 MHz
|
Infineon Technologies AG
|
