| PART |
Description |
Maker |
| IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
| IRF7507PBF IRF7507TRPBF IRF7507PBF-15 |
Generation V Technology
HEXFET㈢Power MOSFET
HEXFET?Power MOSFET
Ultra Low On-Resistance
|
International Rectifier
|
| KRF7343 |
HEXFET Power MOSFET
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| IRF7403 IRF7403TRPBF |
Generation V Technology
Power MOSFET
|
IRF[International Rectifier]
|
| 8T49N012 |
Fourth Generation FemtoClock NG PLL technology
|
Integrated Device Techn...
|
| IRF7403_04 IRF7403PBF IRF740304 IRF7403PBF-15 |
GENERATION V TECHNOLOGY
HEXFET Power MOSFET
|
IRF[International Rectifier]
|
| IRF9952PBF IRF9952TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IKW15N120T2 IKW15N120T208 |
Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology
|
Infineon Technologies AG
|
| SGP02N60 SGP02N6007 SGD02N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7304TR |
Generation V Technology
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
