| PART |
Description |
Maker |
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
| IRLMS6702PBF IRLMS6702TRPBF IRLMS6702PBF-15 |
Generation V Technology, Micro6 Package Style, Ultra Low RDS
2.4 A, 20 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
|
International Rectifier
|
| IRF7311PBF IRF7311PBF-15 |
GENERATION V TECHNOLOGY
|
International Rectifier
|
| IRL3103D1PBF |
Generation 5 Technology
|
International Rectifier
|
| IRLMS6702 IRLMS6702TR |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IKW15N120T2 IKW15N120T208 |
Low Loss DuoPack : IGBT in 2nd generation TrenchStop technology
|
Infineon Technologies AG
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N120 SGP15N120 SGP15N12009 SGW15N120FKSA1 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IRF7389 IRF7389TR |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
