| PART |
Description |
Maker |
| MSM41256A-15JS MSM41256A-10JS |
256K X 1 PAGE MODE DRAM, 150 ns, PQCC18
256K X 1 PAGE MODE DRAM, 100 ns, PQCC18
|
OKI ELECTRIC INDUSTRY CO LTD
|
| V53C464A V53C464J V53C464P V53C464Z |
High Performance / Low Power 64K x 4-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| IBM11N32645BB-60W IBM11N32735BB-60W IBM11N32645CB- |
x72 EDO Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
American Power Management, Inc.
|
| MT8LDT264HG-6X MT4LDT164HG-6X MT8LDT264HG-6S MT4LD |
x64 Fast Page Mode DRAM Module
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Micron Technology, Inc.
|
| GLT41116-30J4 GLT41116-45J4 |
30ns; 64K x 16 CMOS dynamic RAM with fast page mode
45ns; 64K x 16 CMOS dynamic RAM with fast page mode
|
G-LINK Technology
|
| IS41C16105 IS41C16105-50K IS41C16105-50KE IS41C161 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO44
|
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Circuit Solution Inc
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| AM9016DDC AM9016DPC |
16K X 1 PAGE MODE DRAM, 250 ns, CDIP16
16K X 1 PAGE MODE DRAM, 250 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
| AS4C14400-50TC AS4C14400-50JC |
1M-bit 4 CMOS DRAM (Fast page mode or EDO) 1M X 4 FAST PAGE DRAM, 50 ns, PDSO20
1M-bit ??4 CMOS DRAM (Fast page mode or EDO)
|
Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
|
| MT4C16270 |
DRAM 256K X 16 DRAM 5V / EDO PAGE MODE
|
Micron Technology
|
