| PART |
Description |
Maker |
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| MB814400C-60 MB814400C-70 |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC AS4C4M4F1Q-60JC |
DRAM|FAST PAGE|4MX4|CMOS|SOJ|28PIN|PLASTIC
DRAM|FAST PAGE|4MX4|CMOS|TSOP|28PIN|PLASTIC
4M X 4 FAST PAGE DRAM, 60 ns, PDSO28
|
ALLIANCE SEMICONDUCTOR CORP
|
| MB85391A-60 MB85391A-70 |
CMOS 4M×32Bit Fast Page Mode DRAM Module S(CMOS 4M×32快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| AS4C4M4F1 AS4C4M4F0 |
5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
|
| AS4LC4M4F1-60TI AS4LC4M4F1 AS4LC4M4F1-50JC AS4LC4M |
4M×4 CMOS DRAM (Fast Page) 3.3V Family
4M】4 CMOS DRAM (Fast Page) 3.3V Family
4M CMOS DRAM (Fast Page) 3.3V Family 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24
4M CMOS DRAM (Fast Page) 3.3V Family 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| VG2617400D VG26V17400D |
CMOS DRAM
|
Vanguard International Semiconductor
|
| GM71C17403C |
CMOS DRAM
|
Hyundai
|
| KM41C464 |
CMOS DRAM
|
Samsung Electronics
|
| MCM51L4100 |
4M x 1 CMOS DRAM
|
Motorola
|
| VG2617405 |
CMOS DRAM
|
Vanguard Microelectronics Limited
|
