PART |
Description |
Maker |
NTE5513 NTE5511 NTE5512 |
Silicon controlled rectifier (SCR), 5 Amp. Peak reverse voltage (repetitive) Vrm(rep) = 400V. Forward current RMS Ifrms = 5A. Silicon Controlled Rectifier (SCR) 5 Amp
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NTE[NTE Electronics]
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NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A. Silicon Controlled Rectifier (SCR) 35 Amp
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NTE[NTE Electronics]
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MCR310-010 MCR310-D |
Silicon Controlled Rectifier 10A 800V Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
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ON Semiconductor
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TYN058 |
SILICON CONTROLLED RECTIFIER,50V V(DRM) Silicon controlled rectifiers From old datasheet system
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ST Microelectronics
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IRKL41-06 IRKL41-08 IRKL41-14 |
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 800 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
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Vishay Semiconductors
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IRKH41-12 IRKH41-14 |
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
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Vishay Semiconductors
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SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE 650 A, 1200 V, SILICON, RECTIFIER DIODE 1520 A, 5800 V, SILICON, RECTIFIER DIODE 1610 A, 4200 V, SILICON, RECTIFIER DIODE 5100 A, 3000 V, SILICON, RECTIFIER DIODE 5100 A, 3200 V, SILICON, RECTIFIER DIODE 1030 A, 3600 V, SILICON, RECTIFIER DIODE 2050 A, 2800 V, SILICON, RECTIFIER DIODE 1860 A, 4000 V, SILICON, RECTIFIER DIODE
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WESTCODE SEMICONDUCTORS LTD
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MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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ONSEMI[ON Semiconductor]
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SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE 1160 A, 3400 V, SILICON, RECTIFIER DIODE 1010 A, 3600 V, SILICON, RECTIFIER DIODE 1106 A, 3800 V, SILICON, RECTIFIER DIODE 2640 A, 3800 V, SILICON, RECTIFIER DIODE 1106 A, 3400 V, SILICON, RECTIFIER DIODE 435 A, 1500 V, SILICON, RECTIFIER DIODE 440 A, 600 V, SILICON, RECTIFIER DIODE 1160 A, 3800 V, SILICON, RECTIFIER DIODE 1160 A, 4200 V, SILICON, RECTIFIER DIODE 940 A, 800 V, SILICON, RECTIFIER DIODE 940 A, 1800 V, SILICON, RECTIFIER DIODE 940 A, 400 V, SILICON, RECTIFIER DIODE 940 A, 1000 V, SILICON, RECTIFIER DIODE 940 A, 600 V, SILICON, RECTIFIER DIODE 940 A, 1600 V, SILICON, RECTIFIER DIODE 1106 A, 4000 V, SILICON, RECTIFIER DIODE 310 A, 2600 V, SILICON, RECTIFIER DIODE 370 A, 2600 V, SILICON, RECTIFIER DIODE 2700 A, 2600 V, SILICON, RECTIFIER DIODE 860 A, 1400 V, SILICON, RECTIFIER DIODE 440 A, 400 V, SILICON, RECTIFIER DIODE 440 A, 800 V, SILICON, RECTIFIER DIODE 435 A, 1600 V, SILICON, RECTIFIER DIODE 435 A, 1800 V, SILICON, RECTIFIER DIODE 527 A, 3200 V, SILICON, RECTIFIER DIODE
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WESTCODE SEMICONDUCTORS LTD
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ST280S04M1V ST280S06M1V |
Silicon Controlled Rectifier, 440 A, 400 V, SCR, TO-209AB Silicon Controlled Rectifier, 440 A, 600 V, SCR, TO-209AB
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Vishay Semiconductors
|
C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V. 4-A Sensitive-Gate Silicon Controlled Rectifiers
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General Electric Solid State GESS[GE Solid State] http://
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