| PART |
Description |
Maker |
| 48SD3208RPFE 48SD3208RPFH 48SD3208RPFK |
CAP 1.5UF 50V CERAMIC MONO 20% 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
256 Mb SDRAM 8-Meg X 8-Bit X 4-Banks 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDFP72
|
Maxwell Technologies, Inc
|
| K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E- |
Mobile-SDRAM 移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MC-4532DA727PF-A75 MC-4532DA727EF-A75 MC-4532DA727 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
NEC Corp.
NEC, Corp.
|
| K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54
128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HYB39S256800T-8B HYB39S256400T-8B HYB39S256800T-10 |
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Siemens Semiconductor Group
SIEMENS AG
|
| HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGL |
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4 Banks x 2M x 8Bit Synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
|
Hynix Semiconductor, Inc.
http://
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| TC59SM808CMBL-80 |
32M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA60
|
|
| KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402
512Mb (32M x 16) PC133 2-2-2 Available Q402
512Mb (32M x 16) PC133 3-3-3 Available Q402
128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
| EBS25EC8APFA-7A EBS25EC8APFA EBS25EC8APFA-75 |
256MB Unbuffered SDRAM DIMM 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
