| PART |
Description |
Maker |
| BC869 |
High current. Three current gain selections. 1.2 W total power dissipation.
|
TY Semiconductor Co., L...
|
| BCP69-16 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., Ltd
|
| 2SC3052 |
Collector current :IC=0.2A Power dissipation :PC=0.15W
|
TY Semiconductor Co., Ltd
|
| FZT489 |
Power Dissipation: PC=2W, Continuous Collector Current: IC=1A
|
TY Semiconductor Co., Ltd
|
| FCX790A |
2W power dissipation, 6A peak pulse current
|
TY Semiconductor Co., Ltd
|
| 74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 |
Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
|
NXP Semiconductors N.V.
|
| 188FSB330XGFJ 188FSB360XGFJ 228FSB330XGFK 228FSB36 |
High voltage ?Low Leakage ?low dissipation Factor
|
Illinois Capacitor, Inc...
|
| TSA5888CYRMG |
Low Vcesat PNP Transistor High allowable power dissipation.
|
Taiwan Semiconductor Company, Ltd
|
| FMMT720 |
625mW power dissipation, Extremely low saturation voltage e.g. 10mV typ
|
TY Semiconductor Co., Ltd
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
