| PART |
Description |
Maker |
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| IXTA230N075T2-7 |
230 A, 75 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
|
IXYS CORP
|
| HMC816LP4E10 |
SMT GaAs pHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| IXTA230N075T2 IXTP230N075T2 |
N-Channel Enhancement Mode Avalanche Rated
230 A, 75 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
TrenchT2TM Power MOSFET
|
IXYS Corporation
|
| SEMIX151GB12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| FMC5 FMG9 FMJ1 FMQ1 |
P-Channel NexFET™ Power MOSFET 6-DSBGA -55 to 150
N-Channel NexFET™ Power MOSFET 8-SON -55 to 150
TRANSISTOR | 20V V(BR)CEO | 30MA I(C) | SOT-25
Digital Media Processor 529-FCBGA 0 to 90 晶体管| 50V五（巴西）总裁| 100mA的一（c）|采用SOT - 25
|
飞思卡尔半导体(中国)有限公司
|
| 0194280009 SD-19428-001 |
5.84mm (.230) Pitch MX150L
5.84mm (.230") Pitch MX150L??/a>
MOLEX Connector
|
Molex Electronics Ltd.
|
| 0194280006 SD-19428-011 194280006 |
5.84mm (.230) Pitch MX150L
5.84mm (.230") Pitch MX150L??/a>
MOLEX Connector
|
Molex Electronics Ltd.
|
| D121K18B D121K08B |
230 A, 1800 V, SILICON, RECTIFIER DIODE
230 A, 800 V, SILICON, RECTIFIER DIODE
|
INFINEON TECHNOLOGIES AG
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| MBRF20H150CTG MBR20H150CTG |
20 A,150 V H-Series Dual Schottky Rectifier 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB
SWITCHMODE?/a> Power Rectifier 150 V, 20 A
SWITCHMODE Power Rectifier 150 V, 20 A
SWITCHMODE垄芒 Power Rectifier 150 V, 20 A
|
ON Semiconductor
|
| SUD45P03-15 |
P-Channel Enhancement-Mode Trans
P-Channel 30-V (D-S), 150C MOSFET
|
VISAY[Vishay Siliconix]
|
|
