| PART |
Description |
Maker |
| SM560AF SM5150AF SM5100AF SM5200AF SM520AF-15 SM54 |
20V ~200V 5.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| HS-22620RH HS-2620RH HS-2622RH |
Op Amp, Dual, Wideband, High Input Impedance Uncompensated, 100MHz, 20V/s, Rad-Hard
Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 500MΩ Input Impedance
Op Amp, Single, 80MHz, 20V/s, Rad-Hard, 65MΩ Input Impedance
|
Intersil
|
| FM120-MS-THRU-FM1200-MS FM130-MS |
1A SMD SCHOTTKY BARRIER RECTIFIERS, 20V-200V
|
Frontier Electronics.
|
| SR360 SR340 SR350 SR3150 SR3100 |
3.0A Axial Leaded Schottky Barrier Rectifiers - 20V-200V
|
Formosa MS
|
| IRFP250 IRFP250B IRFP250BFP001 |
200V N-Channel B-FET / Substitute of IRFP250 & IRFP250A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD4N20TM |
200V N-Channel QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V，P通道表面安装抗辐射功率MOSFET00V的电压，P沟道表贴型抗辐射功率马鞍山场效应管）
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
| IRFS240B IRFS240BFP001 |
200V N-Channel B-FET / Substitute of IRFS240 & IRFS240A
200V N-Channel MOSFET 12.8 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
