| PART |
Description |
Maker |
| HSCH-9201TC494 |
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
|
AGILENT TECHNOLOGIES INC
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| CLED400 |
3 V, 50 mA, gallium arsenide infrared emitting diode
|
Clairex Technologies
|
| ITR8102 |
gallium arsenide infrared emitting diode
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| CVG7864-07-325-001 CVG7864-08-325-001 |
X BAND, 18 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SKYWORKS SOLUTIONS INC
|
| CVE7800-06-023-011 CVE7800-24-023-011 |
mm WAVE BAND, 25 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
|
SKYWORKS SOLUTIONS INC
|
| AH445-70 AH491-70 AH490-00 AH491-71 AH618-00 AH370 |
10 GHz - 11 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
12 GHz - 13.5 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
16.5 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
46 GHz - 50 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
20 GHz - 22 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
18 GHz - 20 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
|
ATMEL CORP
|
| ML4963-138 ML4971-138 ML4941-111 ML4941-118 ML4941 |
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
50 GHz - 60 GHz, GALLIUM ARSENIDE, GUNN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
|
