| PART |
Description |
Maker |
| ACT2018SMX-4 |
extremely compact, high quality, low aging, seam welded crystal
|
Advanced Crystal Technology
|
| EC2-6 EC2 EC2-12ND EC2-12NP EC2-12NU EC2-12NJ EC2- |
High Insulation, High breakdown voltage, compact and lightweight, Surface mounting type
COMPACT AND LIGHTWEIGHT/ SMALL MOUNTING SIZE/ HIGH BREAKDOWN VOLTAGE
High Insulation/ High breakdown voltage/ compact and lightweight/ Surface mounting type
A/D Converter (A-D) IC; Resolution (Bits):24; Sample Rate:192kSPS; Input Channels Per ADC:8; Input Channel Type:Differential; Data Interface:Serial; Package/Case:48-LQFP RoHS Compliant: Yes
CONNECTOR ACCESSORY
Film Capacitor; Capacitor Type:Suppression; Voltage Rating:100VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.022uF; Capacitance Tolerance: 10%; Lead Pitch:5.00mm; Leaded Process Compatible:Yes RoHS Compliant: Yes
COMPACT AND LIGHTWEIGHT, SMALL MOUNTING SIZE, HIGH BREAKDOWN VOLTAGE 小巧轻盈，小安装尺寸，高击穿电压
|
NEC Corp.
NEC, Corp.
|
| SSF8N60 |
Extremely high dv/dt capability
|
Silikron Semiconductor ...
|
| STW70N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDG316P |
High performance trench technology for extremely low
|
TY Semiconductor Co., Ltd
|
| CES2316 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2321 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| AP2121AK-1.5TRE1 AP2121AK-2.5TRE1 AP2121AK-2.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CZT2000 |
NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| AMS3401M23RG |
Super high density cell design for Extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
