| PART |
Description |
Maker |
| MAFR-000055-DS1S1R |
Single Junction Robust Lead Isolator 1805 MHz-1880 MHz
|
M/A-COM Technology Solutions, Inc.
|
| MAFR-000085-DS1C1T |
Single Junction Drop-In Circulator 1805 MHz-1880 MHz
|
M/A-COM Technology Solutions, Inc.
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| SM1819-52LD |
1805 - 1880 MHz 160 Watt Power Amplifier
|
Stealth Microwave, Inc.
|
| PXAC182908FV-V1 |
High Power RF LDMOS FET 240W, 28V, 1805 - 1880 MHz
|
Wolfspeed
|
| PTFA181001E |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
| CPA-118-PAA CPA-111-PBA CPA-114-PBA CPA-110-PBM |
1750 MHz - 3000 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
NEC, Corp.
M/A-COM Technology Solutions, Inc.
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
| PH1819-45 PHL819-45 |
Wireless Bipolar Power Transistor, 45W 1805 - 1880 MHz
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C 无线双极功率晶体管，451805年至1880年兆
Wireless Bipolar Power Transistor/ 45W 1805 - 1880 MHz
Low Power Zero-Drift Operational Amplifier with Internal Capacitors; Package: PDIP; No of Pins: 8; Temperature Range: 0°C to 70°C
|
Ecliptek, Corp.
Tyco Electronics
|
