PART |
Description |
Maker |
P412025 PS4125 P411825 P412225 P412425 |
POW-R-BLOK Single Diode Isolated Module (2500 Amperes / Up to 2400 Volts) POW - r的,单台BLOk反应腔二极管隔离模块(二五?安高达2400伏特
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
CMPA1D1E025F CMPA1D1E025F-AMP |
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
|
Cree, Inc
|
RFHA3942 |
35W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
ECE-V1HA101UP RF3933TR7 EEV-TG2A101M ERJ-8GEYJ100V |
90W GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
MAPG-S22729-350L00 MAPG-002729-350L00 |
S-Band 350 W Radar Pulsed Power GaN Pallet
|
M/A-COM Technology Solu...
|
CGHV14500 CGHV14500F CGHV14500F-AMP CGHV14500F-TB |
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
AGN1440 |
Ku Band GaN Amplifier MMIC
|
Advanced Semiconductor ...
|
UPD30100GC-40-9EU |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 434.0 MHz 868.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 10.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Ecliptek, Corp.
|
FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
|
Eudyna Devices Inc
|
NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1% C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
CM431655 CM431255 |
Dual SCR POW-R-BLOK?Modules 55 Amperes/1200-1600 Volts Dual SCR POW-R-BLOK Modules 55 Amperes/1200-1600 Volts Dual SCR POW-R-BLOK⑩ Modules 55 Amperes/1200-1600 Volts Dual SCR POW-R-BLOKModules 55 Amperes/1200-1600 Volts
|
Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
|