| PART |
Description |
Maker |
| CY7C1429JV18-250BZC CY7C1429JV18-250BZI CY7C1429JV |
4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1418BV18-278BZC CY7C1418BV18-278BZI CY7C1418BV |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1568KV18-550BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| GS8662T18GE-267 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
GSI Technology, Inc.
|
| CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CAT64LC10ZJ CAT64LC10ZP CAT64LC10J-TE7 CAT64LC10J- |
18-Mbit QDR™-II SRAM 4-Word Burst Architecture
18-Mbit DDR-II SRAM 2-Word Burst Architecture
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
4-Mbit (256K x 18) Flow-Through Sync SRAM SPI串行EEPROM
SPI Serial EEPROM SPI串行EEPROM
|
Analog Devices, Inc.
|
| CY7C1277V18-300BZC CY7C1266V18-300BZXC CY7C1266V18 |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4M X 9 DDR SRAM, 0.45 ns, PBGA165
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 4M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1416AV18-167BZXI CY7C1416AV18-167BZC CY7C1416A |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.5 ns, PBGA165
36-Mbit DDR-II SRAM 2-Word Burst Architecture 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|
| IDT7164 IDT7164L IDT7164L15D IDT7164L15DB IDT7164L |
Dual UART with 16-Byte Fifos, Selectable IR & 1284 Modes 80-QFP
CMOS STATIC RAM 64K (8K x 8-BIT) 8K X 8 STANDARD SRAM, 30 ns, PDIP28
8347 PBGA NO-PB W/O ENCR 8K X 8 STANDARD SRAM, 30 ns, PDIP28
CMOS STATIC RAM 64K (8K x 8-BIT) 8K X 8 STANDARD SRAM, 55 ns, CDIP28
Replaced by TL16C754B : Quad UART with 64-Byte Fifos, Auto Flow Control, Low-Power Modes 68-PLCC -40 to 85 8K X 8 STANDARD SRAM, 25 ns, PDIP28
Dual UART With 64-Byte FIFO 32-QFN 0 to 70
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| GS8130219GE-333I GS8130207E-375IT |
4M X 18 DDR SRAM, 0.45 ns, PBGA165
16M X 8 DDR SRAM, 0.45 ns, PBGA165
|
GSI TECHNOLOGY
|
| IS61DDPB21M36A-333M3LI IS61DDPB21M36A-300M3I IS61D |
1M X 36 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.20 MM HEIGHT, LEAD FREE, LFBGA-165
1M X 36 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.20 MM HEIGHT, LFBGA-165
|
Integrated Silicon Solution, Inc.
|
