PART |
Description |
Maker |
AT28C01006 AT28C010 AT28C010E-15JI AT28C010E-15PI |
128K X 8 EEPROM 5V, 150 ns, PDIP32 120NS, TSOP, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 120 ns, PDIP32 1-megabit (128K x 8) Paged Parallel EEPROM
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Atmel, Corp. ATMEL Corporation
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WE128K32N-120G2TC WE128K32N-120G2TCA WE128K32N-120 |
Access time:120 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:150 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:200 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:140 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:300 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:250 ns; 128K x 32 EEPROM module, SMD 5962-94585 Access time:240 ns; 128K x 32 EEPROM module, SMD 5962-94585
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White Electronic Designs
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AT28LV010-20PL |
128K X 8 EEPROM 3V, 200 ns, PDIP32
|
ATMEL CORP
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CAT28C16AKI-20 CAT25C03U-1.8 CAT25040YI-GT3 CAT24W |
EEPROM (256x8) 2K 1.8-6.0 The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS EEPROM (4kx8) 32K 1.8-6.0 EEPROM (2048x8) 16K EEPROM (256x8) 2K 2.5-6.0 EEPROM 64K X 8 512K 5V EEPROM (256x8) (128x16) 2K EEPROM (8kx8) 64K 3V EEPROM (512x8) (256x16) 4K EEPROM (2048x8)(1024x16)16K EEPROM (128x8) 1k 1.8-6.0 EEPROM (8kx8) 64K 1.8-6.0 EEPROM 16K-Bit CMOS PARA EEPROM EEPROM (512x8) 4k 2.5-6.0 EEPROM (4096x8) 32k 1.8-6.0 EEPROM (384x8) 128k 16 EEPROM (2Kx8) 16K 5V 90ns
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Electronic Theatre Controls, Inc. ON Semiconductor Qualtek Electronics, Corp. Lumex, Inc. Vicor, Corp. EPCOS AG NXP Semiconductors N.V. Atmel, Corp. Linear Technology, Corp. Amphenol, Corp. Bourns, Inc. TE Connectivity, Ltd. Integrated Silicon Solution, Inc. Anpec Electronics, Corp.
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5962-3826707 5962-3826705 5962-3826701 |
128K x 8 EEPROM, MIL-STD-883C, 120ns 128K x 8 EEPROM, CMOS, MIL-STD-883, 150ns 128K EEPROM MIL-STD-883, 250ns
|
Intersil
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WE128K32-120G4MA WE128K32P-300H1CA WE128K32P-300H1 |
128K X 32 EEPROM 5V MODULE, 120 ns, CQFP68 128K X 32 EEPROM 5V MODULE, 300 ns, CPGA66
|
MICROSEMI CORP-PMG MICROELECTRONICS
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24WC128 CAT24WC128 CA24WC128PI-1.8TE13 CA24WC128KI |
128K-Bit I2C Serial CMOS E2PROM 128K-BitI2CSerialCMOSE2PROM 1.8V-6.0V 128K-bit IIC serial CMOS EEPROM 2.5V-6.0V 128K-bit IIC serial CMOS EEPROM
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CatalystSemiconductor CATALYST[Catalyst Semiconductor]
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AS8ER128K32Q-250/XT AS8ER128K32Q-250/IT AS8ER128K3 |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
|
Austin Semiconductor
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CAT24WC12833PA-1.8TE13 CAT24WC12833PI-1.8TE13 CAT2 |
128K-Bit I2C Serial CMOS EEPROM 128K的位I2C串行CMOS EEPROM
|
FCI Intersil, Corp.
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SST28VF040A-90-4C-PH SST28SF040A-90-4C-PH SST28SF0 |
4 Mbit (512K x8) SuperFlash EEPROM(4 M(512K x8)超级闪存存储 RESISTOR 62 OHM .5W CARB COMP 4 Mbit (512K x8) SuperFlash EEPROM 4兆位(为512k × 8)超快闪EEPROM 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32 4 Mbit (512K x8) SuperFlash EEPROM 512K X 8 FLASH 2.7V PROM, 200 ns, PDSO32 (SST28xF040A) 4 Mbit (512K x8) SuperFlash EEPROM
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28L |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C); CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C); CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C); Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
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Maxwell Technologies, Inc
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