PART |
Description |
Maker |
HY5PS121621CFP-C4I HY5PS12821CFP-C4I HY5PS121621CF |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, 0.45 ns, PBGA84 128M X 4 DDR DRAM, 0.45 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
W947D2HBJX5I W947D2HBJX6E W947D2HBJX5E W947D2HBJX6 |
128Mb Mobile LPDDR 4M X 32 DDR DRAM, 5 ns, PBGA90 8M X 16 DDR DRAM, 5 ns, PBGA60
|
Winbond WINBOND ELECTRONICS CORP
|
HY5DU12822DTP-D43 HY5DU12822DLTP-D43 HY5DU12822DLT |
32M X 16 DDR DRAM, 0.75 ns, PDSO66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 512Mb DDR SDRAM
|
HYNIX SEMICONDUCTOR INC
|
V59C1512164QDLJ25H V59C1512404QDLJ25AI |
32M X 16 DDR DRAM, PBGA84 128M X 4 DDR DRAM, PBGA60
|
PROMOS TECHNOLOGIES INC
|
V58C2256324SHUR4E V58C2256324SHUR6E V58C2256324SHU |
8M X 32 DDR DRAM, PBGA60 ROHS COMPLIANT, MO-233, FBGA-60 64M X 4 DDR DRAM, PBGA60
|
ProMOS Technologies, Inc. PROMOS TECHNOLOGIES INC
|
MT46V8M16BJ-75EITA MT46V8M16BJ-75ELITA MT46V8M16BJ |
8M X 16 DDR DRAM, 0.75 ns, PBGA60 16 X 9 MM, LEAD FREE, FBGA-60 32M X 4 DDR DRAM, 0.75 ns, PBGA60
|
Xicon Passive Components
|
NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB256M4AN-BE NT |
DDR DRAM, PBGA96 DDR DRAM, PBGA78
|
NANYA TECHNOLOGY CORP
|
MT41J1G4THD-187ED MT41J1G4THU-187A MT41J1G4THU-15A |
1G X 4 DDR DRAM, PBGA78 1G X 4 DDR DRAM, PBGA82
|
|
HYMD532M646A6-H HYMD532M646A6-J HYMD532M646A6-K HY |
DDR SDRAM - SO DIMM 256MB 32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200 Unbuffered DDR SO-DIMM
|
HYNIX SEMICONDUCTOR INC
|
HMP351U6AFR8C-S6 HMP351U6AFR8C-S5 HMP351U7AFR8C-S5 |
512M X 64 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, UBDIMM-240 240pin DDR2 SDRAM Unbuffered DIMMs based on 2Gb A version 512M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM 64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200 128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|