| PART |
Description |
Maker |
| APT14F100S APT14F100B09 |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
Microsemi Corporation
MICROSEMI POWER PRODUCTS GROUP
|
| BC639L34Z BC639D74Z |
NPN Epitaxial Silicon Transistor 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| 2SD1616A 2SD1616 D1616 2SD1616AU 2SD1616-L |
1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN SILICON TRANSISTORS NPN硅三极管
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-92
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| BSP5007 BSP52 |
1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Silicon Darlington Transistors
|
Infineon Technologies AG
|
| 2N3110 2N3110.MODE4 |
1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
Bipolar NPN Device in a Hermetically sealed TO39
|
SEMELAB LTD
Seme LAB
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| BFY5002 BFY50.MODE4 |
MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
Seme LAB
SEMELAB LTD
|
| FCX591 FCX491 FCX491TA |
SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR SOT-89, 3 PIN
|
Diodes Incorporated
Diodes, Inc.
|
| FMMT491 |
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
RECTRON LTD
|
| 2SD774 2SD774U4 2SD774-U4-AZ |
1000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
NPN SILICON TRANSISTOR
|
NEC Corp.
NEC[NEC]
|
| CFD811 |
65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 8.000A Ic, 1000 hFE.
TRANSISTOR | BJT | DARLINGTON | NPN | 110V V(BR)CEO | 8A I(C) | TO-220FP
|
Continental Device India Limited
|
| 2SJ278MYTR-E 2SJ278 2SJ278MYTL-E |
1000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Silicon P Channel MOS FET
|
Renesas Electronics Corporation
|
|
