| PART |
Description |
Maker |
| HYMD216M726AL6-K HYMD216M726AL6-H HYMD216M726AL6-J |
Unbuffered DDR SO-DIMM
16M X 72 DDR DRAM MODULE, 0.7 ns, DMA200
|
HYNIX SEMICONDUCTOR INC
|
| HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3)
128Mb (16Mx8) DDR 266B (2.5-3-3)
16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| V58C2256164SCE5BI |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
| NT5DS16M16BS-6KL |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
| EDE2516AASE-4A-E EDE2516AASE-5C-E |
16M X 16 DDR DRAM, 0.6 ns, PBGA84
16M X 16 DDR DRAM, 0.5 ns, PBGA84
|
ELPIDA MEMORY INC
|
| MT8VDDT1664HDG-335XX |
16M X 64 DDR DRAM MODULE, 0.75 ns, ZMA200
|
|
| HYMD116G725A8-H |
16M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| EM6AA160TS EM6AA160TS-4G EM6AA160TS-5G |
16M x 16 bit DDR Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
| HY5RS123235BFP-14 HY5RS123235BFP-18L HY5RS123235BF |
16M X 32 DDR DRAM, 0.26 ns, PBGA136 11 X 14 MM, ROHS COMPLIANT, FBGA-136
16M X 32 DDR DRAM, PBGA136 11 X 14 MM, ROHS COMPLIANT, FBGA-136
16M X 32 DDR DRAM, 0.35 ns, PBGA136 11 X 14 MM, ROHS COMPLIANT, FBGA-136
16M X 32 DDR DRAM, 0.22 ns, PBGA136 11 X 14 MM, ROHS COMPLIANT, FBGA-136
|
Hynix Semiconductor, Inc.
|
| W9751G8JB W9751G8JB-3 |
16M ?4 BANKS ?8 BIT DDR2 SDRAM
DDR DRAM, PBGA84
|
Winbond
WINBOND ELECTRONICS CORP
|
