| PART |
Description |
Maker |
| LD20 LD40 LD10 LD13 LD12 LD06 LD08 |
High Voltage MLC Chips Tin/Lead Termination “B For 600V to 5000V Applications
High Voltage MLC Chips Tin/Lead Termination “B?For 600V to 5000V Applications
|
AVX Corporation
|
| SV01AA102KAA SV14AA103KAR |
High Voltage MLC Radials (SV Style) Application Information on High Voltage MLC Capacitors
|
AVX Corporation
|
| 3VD395650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD212600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD186700YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD379600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD379500YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD393600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD395600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| SMBJ5V0 SMBJ7.0A SMBJ5.0A SMBJ6.0A SMBJ90A SMBJ100 |
DEVICES FOR BIPOLAR APPLICATIONS
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:17V)(600W瞬变电压抑制反向隔离电压17V 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:9.0V)(600W瞬变电压抑制反向隔离电压9.0V 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:8.0V)(600W瞬变电压抑制反向隔离电压8.0V 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:7.5V)(600W瞬变电压抑制反向隔离电压7.5V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:6.5V)(600W瞬变电压抑制反向隔离电压6.5V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:6.0V)(600W瞬变电压抑制反向隔离电压6.0V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:8.5V)(600W瞬变电压抑制反向隔离电压8.5V
600 Watt Transient Voltage Suppressor(Reverse Stand-off Voltage:22V)(600W瞬变电压抑制反向隔离电压2V
600 Watt Transient Voltage Suppressors
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
