PART |
Description |
Maker |
IRF710 FN2310 |
2.0A, 400V, 3.600 Ohm,N-Channel PowerMOSFET(2.0A, 400V, 3.600 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 2.0A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2 A, 400 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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HARRIS SEMICONDUCTOR Intersil Corporation
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MTP1N60E |
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM 1 A, 600 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Motorola Mobility Holdings, Inc. Motorola, Inc
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HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
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Fairchild Semiconductor
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IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 21 A, 60 V, 0.042 ohm, N-CHANNE 28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Bourns, Inc. JST Mfg. Co., Ltd. Vishay Intertechnology, Inc. Austin Semiconductor, Inc
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NPR2-T221 NHS2-T221 NHR2-T221 NPS2-T220 NPS2-T221 |
RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, THROUGH HOLE MOUNT TO-220 RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, SURFACE MOUNT TO-220 RESISTOR, METAL GLAZE/THICK FILM, 1.5 W, 1; 2; 5 %, 50; 100; 300; 600 ppm, 0.02 ohm - 100000 ohm, THROUGH HOLE MOUNT TO-221 Power Resistors
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Riedon, Inc. Riedon Powertron
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S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1) Light modulation photo IC 光调制照片集成电
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Hamamatsu Photonics
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STD1HN60K3 STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in DPAK package N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package
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ST Microelectronics
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FSF450R4 FSF450D FSF450D1 FSF450D3 FSF450R FSF450R |
9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9A, 500V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 9 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
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INTERSIL[Intersil Corporation] Intersil, Corp.
|
SSP2N60BJ69Z |
2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
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APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
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MICROSEMI POWER PRODUCTS GROUP
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2SK3567 |
3.5 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET
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