| PART |
Description |
Maker |
| PMBT3906YS PMBT3906YS115 |
40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| PMBT3946YPN |
40 V, 200 mA NPN/PNP general-purpose double transistor
40 V, 200 mA NPN-PNP general-purpose double transistor 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BFX81DCSM-MOD BFX81G4 BFX81DCSM-QR-B BFX81.MODG4 B |
200 mA, 20 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR LCC2-6
200 mA, 20 V, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR TO-77, 8 PIN
|
TT electronics Semelab, Ltd.
|
| BC847PN-B |
200 mA, 45 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
SIEMENS AG
Infineon Technologies AG
|
| 2N4125TANL |
PNP General Purpose Amplifier 200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| PHX18NQ20T PHX18NQ20T-01 PHX18NQ20T127 |
From old datasheet system
8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220F, 3 PIN
N-channel enhancement mode field-effect transistor 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| STP80N20M5 STB80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package
65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
|
ST Microelectronics
STMICROELECTRONICS
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 2N2894AC1B-JQRS.GRPB 2N2894AC1B-JQRS.GRPC 2N2894AC |
200 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR HERMETIC SEALED, CERAMIC, SOT-23 COMPATIBLE, 3 PIN
HIGH SPEED PNP SILICON BIPOLAR TRANSISTOR
|
TT electronics Semelab, Ltd.
Seme LAB
SEMELAB LTD
|
| AD7923BRU EVAL-AD7923CB2 AD7923 |
Four Wall Header; No. of Contacts:60; Pitch Spacing:0.1"; No. of Rows:2; Gender:Header; Body Material:Glass-filled Polyester; Contact Plating:Nickel; Leaded Process Compatible:No; Mounting Type:Through Hole RoHS Compliant: No
4-Channel 200 kSPS 12-Bit ADC with Sequencer in 16-Lead TSSOP
4-Channel, 200 kSPS, 12-Bit ADC with Sequencer in 16-Lead TSSOP
4-Channel 200 kSPS, 12-Bit A/D Converter with Sequencer in 16-Lead TSSOP
|
ADC
AD[Analog Devices]
|
| PU4316 PU4163 |
2 A, 150 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
4 A, 200 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts 200 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
|
