| PART |
Description |
Maker |
| HM514280ALZ-7 HM514280ALTT-7 HM514280ALJ-10 |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40
256K X 18 FAST PAGE DRAM, 70 ns, PDSO40
256K X 18 FAST PAGE DRAM, 100 ns, PDSO40
|
|
| UPD42S4263AG5-80 UPD42S4263AV-70 UPD42S4263ALE-60 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40
256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
|
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
| IS41LV16257A-35KL |
256K X 16 FAST PAGE DRAM, 35 ns, PDSO40
|
INTEGRATED SILICON SOLUTION INC
|
| V53C104DK80 |
256K X 4 FAST PAGE DRAM, 80 ns, PDSO20
|
MOSEL-VITELIC
|
| TC514256AJ-10EL |
256K X 4 FAST PAGE DRAM, 100 ns, PDSO20
|
|
| KM44C256A |
256k x 4Bit CMOS DRAM with Fast Page Mode
|
Samsung Electronics
|
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| HYB3116400BJ-60 HYB3116400BJ-50 HYB3117400BJ-50 HY |
3.3V 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 50 ns, PDSO26
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, TSOP2-26/24
4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 0.300 INCH, PLASTIC, SOJ-26/24
|
SIEMENS AG
Infineon Technologies AG
http://
|
| V53C256A V53C256P80L V53C256XXXX |
(V53C256A Series) High Performance / Low Power 256k x 1-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| V53C104B V53C104BK70 V53C104BK70L V53C104BK80 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
