| PART |
Description |
Maker |
| AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time
x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode)
5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time
5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
| V53C256AP60 V53C256AP70 V53C256AJ80 V53C256AJ60 V5 |
256K X 1 FAST PAGE DRAM, 60 ns, PDIP16
256K X 1 FAST PAGE DRAM, 70 ns, PDIP16
256K X 1 FAST PAGE DRAM, 80 ns, PQCC18
256K X 1 FAST PAGE DRAM, 60 ns, PQCC18
256K X 1 FAST PAGE DRAM, 100 ns, PQCC18
|
MOSEL-VITELIC
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| TC514900AZL-70 TC514260BZLL-70 TC514800AZL-80 TC51 |
512K X 9 FAST PAGE DRAM, 70 ns, PZIP28 ZIP-28
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
512K X 8 FAST PAGE DRAM, 80 ns, PZIP28 ZIP-28
512K X 8 FAST PAGE DRAM, 70 ns, PZIP28 ZIP-28
256K X 18 FAST PAGE DRAM, 80 ns, PZIP40 ZIP-40
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
|
SIEMENS AG
|
| AS4C256K16FO |
5V 256K × 16 CMOS DRAM (Fast Page Mode)(5V 256K × 16 CMOS动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| HYB514256BZL-70 HYB514256BZL-60 |
256K X 4 FAST PAGE DRAM, 70 ns, PZIP20
256K X 4 FAST PAGE DRAM, 60 ns, PZIP20
|
SIEMENS AG
|
| KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics
Samsung semiconductor
|
| THM82500ASG-70 THM82500ASG-80 |
256K X 8 FAST PAGE DRAM MODULE, 70 ns, SMA30
256K X 8 FAST PAGE DRAM MODULE, 80 ns, SMA30
|
|
| KM44C256A |
256k x 4Bit CMOS DRAM with Fast Page Mode
|
Samsung Electronics
|
| MB81C4256A |
256K x 4-Bit Fast Page Mode Low Power DRAM
|
Fujitsu Media Devices
|
| V53C104B V53C104BK70 V53C104BK70L V53C104BK80 V53C |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
