| PART |
Description |
Maker |
| SI4551DY-T1 |
10000 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
| MMSF10N03ZR2 |
10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET MINIATURE, CASE 751-05, SO-8
|
Motorola Mobility Holdings, Inc.
|
| MMSF10N03ZR2 |
10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET CASE 751-07, SOP-8
Power MOSFET
|
ON Semiconductor
|
| MMSF10N02Z ON2248 MMSF10N02ZR2 ON2247 |
From old datasheet system
SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS
10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
|
| NE529F NE529H |
COMPARATOR, 10000 uV OFFSET-MAX, CDIP14
COMPARATOR, 10000 uV OFFSET-MAX, MBCY10
|
NXP SEMICONDUCTORS
|
| LT10000-S |
Current Transducer LT 10000-S
|
LEM[LEM]
|
| CGS103U075R4L3PH CGS103U075R4L4PHS CGS103U075R4L3P |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, CHASSIS MOUNT RADIAL LEADED, CAN
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 75 V, 10000 uF, STUD MOUNT RADIAL LEADED, CAN
|
Aerovox, Corp.
|
| HFA1135ML/883 |
OP-AMP, 10000 uV OFFSET-MAX, CQCC20
|
HARRIS SEMICONDUCTOR
|
| HMC611LP4E HMC611LP409 |
60 dB, LOGARITHMIC DETECTOR / CONTROLLER, 1 - 10000 MHz
|
http://
Hittite Microwave Corporation
|
| 3549S-1AC-103B 3549H-1BD-103B |
PRECISION POT-7/8" 22MM DIA 10T WW RESISTOR, POTENTIOMETER, WIRE WOUND, 10 TURN(S), 2 W, 10000 ohm
PRECISION POT-7/8" 22MM DIA 10T WW RESISTOR, POTENTIOMETER, HYBRID, 10 TURN(S), 2 W, 10000 ohm
|
Bourns, Inc.
|
|
