| PART |
Description |
Maker |
| TLP590B |
SPECIALTY OPTOELECTRONIC DEVICE
GaAS As Ired & Photo−Diode Array
Photocoupler GaAlAs Ired & Photo .Diode Array
|
Toshiba Semiconductor
|
| MTD1114M3B MTD1200M3B-15 |
The MTD1114M3B is a photo diode in a ceramic package. It is well suited for high reliability and high sensitivity applications.
Photo Diode
|
Marktech Corporate
|
| BPW97 |
Photo Diode, PIN PHOTO DIODE, HERMETIC SEALED, TO-18, 3 PIN
|
Vishay Semiconductors
|
| MXP1045PC_PV-UV MXP1045 MXP1047PV-UV MXP1047PC-UV |
UV Enhanced Photo Detectors PHOTO DIODE
From old datasheet system
Photoconductive Detectors
Multi Element Opto Arrays
Photovoltaic Detectors
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| TLP191B07 |
GaA?As Ired & Photo-Diode Array
GaAГAs Ired & Photo-Diode Array
|
Toshiba Semiconductor
|
| KPS1008C |
photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC
|
KODENSHI KOREA CORP.
|
| PH312 |
PHOTO DIODE
|
NEC Corp.
NEC[NEC]
|
| SPI5342-H |
Photo Diode
|
AUK[AUK corp]
|
| S11154-201CT-15 |
Photo IC diode
|
Hamamatsu Corporation
|
| KOD-1086 |
Photo diode IC
|
Kondenshi Corp
|
| KOD-1081 |
Photo diode IC
|
KODENSHI[KODENSHI KOREA CORP.]
|
| NJL6165R-1 |
PIN PHOTO DIODE
|
|
