| PART |
Description |
Maker |
| SST55LC100M-45-C-BWE SST55LC100M-45-I-BWE SST55LC1 |
IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA84
CompactFlash Card Controller IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PQFP100
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| USB2227-NE-05 USB2227-NU-10 USB2228-NU-09 USB2227- |
IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PQFP128
|
SMSC Corporation
STANDARD MICROSYSTEMS CORP
|
| SDP3B-110-101-S1 SDP3B-175-101-S1 SDP3BI-110-101-S |
4 Mbps, IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, XMA68
|
SanDisk, Corp.
|
| UM9203 UM9204 |
Flash Memory IC; Memory Size:8Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
DTMF Receiver
|
Electronic Theatre Controls, Inc.
UMC
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| UN421K UNR421K UN4211 UN4210 UN4212 UN4213 UN4214 |
Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:45ns; Series:AM29 RoHS Compliant: Yes
Silicon NPN epitaxial planar type 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Composite Device - Transistors with built-in Resistor 复合装置-内置晶体管，电阻
|
PANASONIC CORP
Panasonic, Corp.
|
| A28F400BR-TB A28F400BR-B AB28F400BR-T80 AB28F400BR |
4-MBIT (256K X 16/ 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-MBIT (256K X 16, 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
Toggle Switch; Circuitry:DPDT; Switch Operation:On-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:3A; Leaded Process Compatible:Yes; Mounting Type:PCB; Features:Standard Actuator RoHS Compliant: Yes
4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
4-Mbit (256K x 16, 512K x 8) SmartVoltage boot block flash memory. Access speed 80 ns
|
Intel Corporation
Intel Corp.
|
| SST58LM024-70-C-FRJ SST58SM024-70-C-FSI SST58SM024 |
ER 16C 16#16 PIN PLUG
PCMCIA Memory Card IC; Supply Voltage Max:5V; Package/Case:16-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Mounting Type:Surface Mount
PWR SUPPLY 350W 3-6V CVR/FAN
PCMCIA Memory Card IC; Supply Voltage Max:5V; Package/Case:16-NSOIC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No
ER 5C 3#12 2#4 SKT PLUG
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:4.1A; Current, Idm pulse:-30A; Power, Pd:1.3W; Resistance, Rds on:0.042R; SMD:1; Charge, gate p
ER 24C 24#16 PIN PLUG
ER 5C 3#12 2#4 PIN PLUG
CAP, 1UF, TANT, 35V, K, RAD, .100, -55C 85C FLASH MEMORY DRIVE CONTROLLER, XMA
ATA-Disk Module FLASH MEMORY DRIVE CONTROLLER, XMA
PWR SUPP 350W 6-12V CVR TOP FAN FLASH MEMORY DRIVE CONTROLLER, XMA
ATA-Disk Module ATA的磁盘模
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
| W29EE011P-90 W29EE011P-15 W29EE011T-15 |
Hook-Up Wire; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Color:Black; Cable/Wire MIL SPEC:MIL-W-16878/1 Type B; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes
KJA SERIES III
128K X 8 CMOS FLASH MEMORY 128K X 8 FLASH 5V PROM, 90 ns, PQCC32
128K X 8 CMOS FLASH MEMORY 128K的8的CMOS闪存
|
Winbond Electronics Corp
Winbond Electronics, Corp.
|
| CAT28F020_04 CAT28F020 CAT28F020G-12T CAT28F020G-9 |
256K X 8 FLASH 12V PROM, 90 ns, PQCC32
2 Megabit CMOS Flash Memory
Bulk Erase Flash Memory, 2Mb
|
http://
CATALYST[Catalyst Semiconductor]
|
| CAT28F102 CAT28F102T14I-45T CAT28F102PI-45T CAT28F |
90ns 1M-bit CMOS flash memory
70ns 1M-bit CMOS flash memory
55ns 1M-bit CMOS flash memory
45ns 1M-bit CMOS flash memory
1 Megabit CMOS Flash Memory
|
Catalyst Semiconductor
http://
|
| MB84VB2000-10 MB84VB2001 MB84VB2001-10 |
PT 8C 8#20 PIN RECP 1M X 8 FLASH 3V PROM, 100 ns, PBGA48
8M (x 8/x 16) FLASH MEMORY & 8M (x 8/x 16) FLASH MEMORY
|
Fujitsu, Ltd.
Fujitsu Component Limited.
|
