| PART |
Description |
Maker |
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| 1SS199 1SS199MHD |
Silicon Schottky Barrier Diode for Various Detector, High Speed Switching 硅肖特基二极管各种探测器，高速开
Silicon Schottky Barrier Diode for Various Detector High Speed Switching
Silicon Schottky Barrier Diode for Various Detector/ High Speed Switching
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| CPD83V |
Switching Diode High Speed Switching Diode Chip
|
Central Semiconductor Corp
|
| BAS21U BAS21 BAS21-03W |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| GBAV152 |
The GBAV152 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| BAV99W BAV99S BAV99B5003 |
Silicon Switching Diode
For high-speed switching applications
|
Infineon Technologies AG
|
| 1SS426 |
Switching diode
Ultra-High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SK3084 EA09398 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型（高速，大电流开关，斩波调压器，DC - DC变换器和电机驱动应用
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
