| PART |
Description |
Maker |
| BAV70 Q68000-A6622 |
Silicon Switching Diode Array (For high-speed switchingFor high-speed switching) 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| FC903 FC903-TR-E |
0.1 A, 3 ELEMENT, SILICON, SIGNAL DIODE
High-Speed Switching Composite Diode Silicon Epitaxial Planar Type
High-Speed Switching Composite Diode
|
ON Semiconductor
SANYO SEMICONDUCTOR CO LTD
SANYO[Sanyo Semicon Device]
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAS70-07W BAS7007W Q62702-A1186 |
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RM50HG-12S RM50HG-12S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| SMBD914 MMBD914 SMBD914/MMBD914 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| BAR74 Q62702-F704 |
From old datasheet system
Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
| BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| SMBD7000 MMBD7000 SMBD7000/MMBD7000 |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
INFINEON[Infineon Technologies AG]
|
| GBAV151 |
The GBAV151 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| Q62702-A1030 BAV70W |
From old datasheet system
SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group
SIEMENS AG
|
