| PART |
Description |
Maker |
| MTB4N80E_D ON2428 ON2426 MTB4N80E |
TMOS POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| STP4N80K5 STD4N80K5 STF4N80K5 STU4N80K5 |
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220 package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 2.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
|
ST Microelectronics
|
| IRFF320 FN1890 |
From old datasheet system
2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET
2.5A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
|
Intersil Corporation
|
| MCR100JZHFL MCR100 MCR100JZHFS0.068OHM MCR100JZHFS |
Low Ohmic Thick Film Chip Resistors
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.068 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.047 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 1 %, 800 ppm, 0.056 ohm, SURFACE MOUNT, 2512 CHIP
RESISTOR, METAL GLAZE/THICK FILM, 1 W, 5 %, 800 ppm, 0.082 ohm, SURFACE MOUNT, 2512 CHIP
|
Rohm
|
| IXTM13N80NBSP IXTH13N80NBSP IXTH11N80 IXTM13N80 IX |
MegaMOSFET
From old datasheet system
MegaMOSFET 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
MegaMOSFET 13 A, 800 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
IXYS Corporation
IXYS, Corp.
|
| SPH1505LF SPH0.15OHM10LF SPH0.82OHM5LF SPH0.56OHM5 |
GENERAL-PURPOSE FAILSAFE MOLDED WIREWOUND RESISTOR
RESISTOR, WIRE WOUND, 2 W, 10 %, 1000 ppm, 0.15 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 5 %, 400 ppm, 0.82 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.56 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 10 %, 400 ppm, 0.82 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.47 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 10 %, 800 ppm, 0.47 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 10 %, 800 ppm, 0.56 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 10 %, 1000 ppm, 0.16 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 10 %, 800 ppm, 0.68 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
RESISTOR, WIRE WOUND, 2 W, 5 %, 800 ppm, 0.68 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
|
IRC - a TT electronics Company.
IRC Advanced Film
|
| IRF720 |
30V N-Channel PowerTrench MOSFET
3.3A/ 400V/ 1.800 Ohm/ N-Channel Power MOSFET
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
|
| STF7N80K5 STFI7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAKFP package
|
ST Microelectronics
|
| SML8075BN |
13 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
TT electronics Semelab, Ltd.
|
| IRF620 |
5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET
|
Fairchild Semiconductor
|
| BUK446-800B127 |
1.7 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
NXP SEMICONDUCTORS
|
|
