| PART |
Description |
Maker |
| ADR360 ADR361 ADR363 ADR364 ADR365 ADR366 |
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.048 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.5 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.0 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 4.096 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 5.0 V-OUT
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.3 V-OUT
|
Analog Devices
|
| CNS7108 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
| SMN7106 SMN7106-D1C |
SURFACE MOUNT AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
| NFP1003 |
HERMETIC MICROWAVE SURFACE MOUNT NOISE SOURCE
|
Micronetics, Inc.
|
| ADR441 ADR440A ADR440ARMZ-REEL7 ADR440B ADR440BRZ- |
ULTRALOW NOISE, LDO XFET VOLTAGE REFERENCES WITH CURRENT SINK AND SOURCE
|
http://
AD[Analog Devices]
|
| ADR361BUJZ-R2 ADR363BUJZ-R2 ADR365WAUJZ-R7 ADR360- |
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.5 VOUT; Package: TSOT; No of Pins: 5; Temperature Range: Industrial 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO5
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.0 VOUT; Package: TSOT; No of Pins: 5; Temperature Range: Industrial 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 3 V, PDSO5
Low Power, Low Noise Voltage References with Sink/Source Capability
|
Analog Devices, Inc.
|
| V54C316162V-6 V54C316162V-55 V54C316162V-7 |
200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 200/183/166/143 MHz.3伏，刷新4K的超高性能100万16 SDRAMX 512Kbit × 16
MORAY EEL 200/183/166/143 MHz.3伏，刷新4K的超高性能100万16 SDRAM组X 512Kbit × 16
200/183/166/143 MHz 3.3 VOLT/ 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
|
Mosel Vitelic, Corp.
Macronix International Co., Ltd.
Mosel Vitelic Corp
|
| D1201UK D1201 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2293UK D2293 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-500MHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-500MHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| NE25139U74 NE25139U73 NE25139U72 NE25139U71 NE2513 |
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,30MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,20MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,10MA I(DSS),SOT-143
TRANSISTOR,MESFET,N-CHAN,DUAL GATE,13V V(BR)DSS,5MA I(DSS),SOT-143
From old datasheet system
|
NEC Electron Devices
|
| ADR364AUJZ-REEL7 ADR360 ADR360B ADR360BUJZ-REEL7 A |
LOW POWER, LOW NOISE VOLTAGE REFERENCES WITH SINK/SOURCE CAPABILITY
|
AD[Analog Devices]
|
| D1208UK D1208 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-12.5V-500MHz,推挽)
|
Seme LAB
TT electronics Semelab Limited
|
|
