| PART |
Description |
Maker |
| V59C1512164QDLJ25H V59C1512404QDLJ25AI |
32M X 16 DDR DRAM, PBGA84
128M X 4 DDR DRAM, PBGA60
|
PROMOS TECHNOLOGIES INC
|
| H5PS1G63EFR H5PS1G43EFR H5PS1G83EFR H5PS1G43EFR-E3 |
1Gb DDR2 SDRAM
256M X 4 DDR DRAM, PBGA60
128M X 8 DDR DRAM, PBGA60
|
http://
HYNIX SEMICONDUCTOR INC
|
| HMP564F7FFP8C-C4 HMP564F7FFP8C-S5 HMP564F7FFP8C-S6 |
240pin Fully Buffered DDR2 SDRAM DIMMs based on 512 Mb F-ver.
256M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
64M X 72 DDR DRAM, DMA240 ROHS COMPLIANT, DIMM-240
|
http://
Hynix Semiconductor, Inc.
|
| MT47H512M8THM-25 MT47H1G4THM-3 |
512M X 8 DDR DRAM, PBGA63 12 X 14 MM, LEAD FREE, FBGA-63
1G X 4 DDR DRAM, PBGA63
|
|
| NT5CB64M16AP-CF NT5CB64M16AP-AC NT5CB256M4AN-BE NT |
DDR DRAM, PBGA96
DDR DRAM, PBGA78
|
NANYA TECHNOLOGY CORP
|
| EDJ1108BASE-DJ-E EDJ1104BASE-AG-E |
128M X 8 DDR DRAM, 0.225 ns, PBGA78
256M X 4 DDR DRAM, 0.3 ns, PBGA78
|
ELPIDA MEMORY INC
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYMP125P72CP4-C4 HYMP125P72CP4-S5 HYMP125P72CP4-S6 |
240pin Registered DDR2 SDRAM DIMMs
256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
| H5TQ1G83AFPR-G8C H5TQ1G63AFPR-G8C H5TQ1G43AFPR-G8C |
128M X 8 DDR DRAM, PBGA78 HALOGEN FREE, FBGA-78
64M X 16 DDR DRAM, PBGA96 HALOGEN FREE, FBGA-96
256M X 4 DDR DRAM, PBGA78 HALOGEN FREE, FBGA-78
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
