| PART |
Description |
Maker |
| RFHA3942D |
35W Linear GaN on SiC Power Amplifier Die
|
RF Micro Devices
|
| CRF-22010-001 CRF-22010-101 |
62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, CDMA, W-CDMA, broadband amplifiers, CATV amplifiers, MMDS
|
CREE POWER
|
| S6205 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S6304 |
SiC Schottky Barrier Diode Bare Die
|
Rohm
|
| S4102 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4101 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4108 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| SCH2080KE |
N-channel SiC power MOSFET co-packaged with SiC-SBD
|
Rohm
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| NE67483B NE67400 |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| NE650103M NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
Duracell
California Eastern Labs
|
