| PART |
Description |
Maker |
| AM41PDS3228D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation Page Mode Flash Memory and 8 Mbit
From old datasheet system
|
AMD Inc
|
| MX23C3210YC-15 23C3210-10 23C3210-12 23C3210-15 MX |
5 Volt 32-Mbit (4M x 8 / 2M x 16) Mask ROM
|
MCNIX[Macronix International]
|
| 23L1610-12 |
3.3 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
|
Macronix International Co., Ltd.
|
| EN29PL064-70BI EN29PL064-70BIP EN29PL064-70CI EN29 |
64/32 Mbit (4/2 M x 16-Bit) CMOS 3.0 Volt- only,
|
Eon Silicon Solution Inc.
|
| 23C1610-15 23C1610-10 23C1610-12 |
5 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM
|
Macronix International Co., Ltd.
|
| PM29F002 |
2 Mbit 5 Volt only CMOS Flash Memory
|
PMC-Sierra
|
| MX23L1611TI-12 23L1611-10 23L1611-12 MX23L1611 MX2 |
3.3 Volt 16-Mbit (2M x 8 / 1M x 16) Mask ROM with Page Mode
|
MCNIX[Macronix International]
|
| AM41PDS3224D |
32 Mbit (2 M x 16-Bit) CMOS 1.8 Volt-only. Simultaneous Operation Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM (Preliminary) 32兆位米16位）的CMOS电压1.8只。同时采取行动，页面模式闪存兆位12x 8-Bit/256x 16位），静态存储器（初步）
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
|
Advanced Micro Devices
|
| EN29PL064-70TIP |
64 Mbit (4 M x 16-Bit) CMOS 3.0 Volt- only, Simultaneous-Read/Write Flash Memory
|
Eon Silicon Solution Inc.
|
| YG963S6R |
SILICON DIODE
IC AM29LV065 64 MBIT (8MX8) CMOS 3.0 VOLT UNIFORM SECTOR FLASH MEMORY
|
http://
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| S25FL032P |
32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus
|
SPANSION
|
| S25FL128K |
128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus
|
SPANSION
|
