| PART |
Description |
Maker |
| HMT312S6BFR6C |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| HMT112S6TFR8A-G7 HMT125S6TFR8A-G7 HMT112S6TFR8A-H9 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| VL-MM9-4SBN |
4GB 512Mx64 DDR3 SDRAM LOW VOLTAGE NON-ECC UNBUFFERED SODIMM 204-PIN
|
List of Unclassifed Manufacturers
|
| PCM-9389NZ-1GOBA1E PCM-9389NZ21GOBA1E PCM-9389NZ22 |
Intel? Atom N455/D525 3.5 SBC, DDR3 SODIMM or on-board SDRAM, PC/104, 18/24-bit LVDS, VGA, 2 GbE, 4 COM, LPC, iManager 2.0
|
Advantech Co., Ltd.
|
| COM-BYTC2 COM-BYTC2-A10-0001 |
DDR3L SODIMM x 1, up to 8 GB, non-ECC Support
|
AAEON Technology
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| ISD-T267SC |
Digital Speech Processor With Caller ID Support and Multiple Supplier Flash Memory Support(具有呼叫身份保证、多供应商闪速存储器支持的数字语音处理器)
|
Winbond Electronics Corp
|
| EDJ1108DJBG-JS-F EDJ1116DJBG-JS-F EDJ1116DJBG-DJ-F |
Differential clock inputs
1G bits DDR3 SDRAM
1G bits DDR3 SDRAM
|
Elpida Memory
|
| R3111D441A-TR-FE R3111Q101C-TR-FE RICOHCOMPANYLTD- |
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO4
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO5
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO3
1-CHANNEL POWER SUPPLY SUPPORT CKT, BCY3
|
RICOH COMPANY LTD
|
| M470T6464AZ3-LD5 M470T2864AZ3-LD5 |
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Samsung Semiconductor Co., Ltd.
|
| HYMP164S64AP6-Y5 HYMP112S64AP6-Y5 |
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
|
Hynix Semiconductor, Inc.
|
| 1025YI-28TE13 1025YI-30TE13 1024YI-42TE13 1025YI-4 |
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 TSSOP-8
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8 MSOP-8
1-CHANNEL POWER SUPPLY SUPPORT CKT, PDIP8 PLASTIC, DIP-8
1-CHANNEL POWER SUPPLY SUPPORT CKT, DSO8
|
ON Semiconductor
Samtec, Inc.
|
