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K7N403609B06 - 128Kx36 & 256Kx18 Pipelined NtRAM

K7N403609B06_6608898.PDF Datasheet

Part No.

K7N403609B06

Description

128Kx36 & 256Kx18 Pipelined NtRAM

File Size

399.79K / 19 Page

Maker

Samsung semiconductor

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(CHINA HK & SZ)
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Part: K7N403601B-QC13

Maker: SAMSUNG

Pack: QFP

Stock: Reserved

Unit price for :

50: $4.80

100: $4.56

1000: $4.32

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http://www.samsung.com/Products/Semiconductor/

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Full text search : 128Kx36 & 256Kx18 Pipelined NtRAM

Related Part Number

PART	Description	Maker
K7N403609B K7N403609B-QC20 K7N401801B-QC13 K7N4018	128Kx36 & 256Kx18 Pipelined NtRAMTM 128K × 36 128Kx36 & 256Kx18 Pipelined NtRAMTM	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
K7N401801B-QC13 K7N403601B-QC13 K7N403601B-QI13 K7	128Kx36 & 256Kx18 Pipelined NtRAM	http:// Samsung semiconductor
K7P401822M	128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet	Samsung Electronic
K7A401800B-QC K7A403600B-QC K7A403200B-QC K7A40360	128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
CY7C1350B-133AI CY7C1350B-133AC CY7C1350B-166AC	128Kx36 Pipelined SRAM with NoBL Architecture 128K X 36 ZBT SRAM, 3.5 ns, PQFP100	Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
CY7C1351 7C1351 CY7C1351-66AC 7C1351-40 7C1351-50	128Kx36 Flow-Through SRAM with NoBL TM Architecture From old datasheet system 128Kx36 Flow-Through SRAM with NoBL Architecture	CYPRESS[Cypress Semiconductor]
7C1351-66 7C1351-40 7C1351-50 CY7C1351-66AC	128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K × 36至流通过与总线延迟TM架构的SRAM 128Kx36 Flow-Through SRAM with NoBL TM Architecture 128K X 36 ZBT SRAM, 11 ns, PQFP100	Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
CY7C1353B-40AC CY7C1353B-50BGC CY7C1353B-50AC CY7C	256Kx18 Flow-Through SRAM with NoBL Architecture	Cypress Semiconductor Corp.
KM736V790	128Kx36 Synchronous SRAM From old datasheet system	Samsung
GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8	166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM 133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM 150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM 200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM	GSI Technology
KM736V787	128Kx36-Bit Synchronous Burst SRAM(128Kx36位同步静RAM)	SAMSUNG SEMICONDUCTOR CO. LTD.

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