| PART |
Description |
Maker |
| IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32
Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes
IC DRIVER 1/2BRDG LOW SIDE 16DIP
DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
|
| AT27C800-10PC AT27C800 AT27C800-10 AT27C800-12 AT2 |
SWTCH PLUNGR SPDT 20A SCREW TERM
8-Megabit 512K x 16 or 1024K x 8 UV Erasable EPROM 512K X 16 OTPROM, 100 ns, PDIP42
Triple 2-Channel Analog Multiplexer/Demultiplexer 16-TSSOP -40 to 85 512K X 16 OTPROM, 120 ns, PDSO44
Quadruple Bilateral Analog Switch 14-SSOP -40 to 85
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| TC554001FTI-85 TC554001FTI-10 |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC554001FTI-85V TC554001FI-85V |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC554001AFT-85V TC554001AFT-70V TC554001ATR-85V TC |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC554001FTL-85L TC554001FL-10L TC554001FTL-10L |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| GS8161E36BD-150 GS8161E36BT-150 GS8161E36BGT-200I |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 7.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PQFP100
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 100万18，为512k × 36，为512k × 36 35.7同步突发静态存储器
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 5.5 ns, PQFP100
|
GSI Technology, Inc.
|
| CY7C1062AV25-10BGC CY7C1062AV25-10BGI |
512K x 32 Static RAM 512K X 32 STANDARD SRAM, 10 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1440AV33 CY7C1442AV33 CY7C1446AV33 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM(36-Mb (1M x 36/2M x 18/512K x 72)管道式同步SRAM)
|
Cypress Semiconductor Corp.
|
|
