Part Number Hot Search : 
74LS37 TA2030 6204B 8EG21 CP767 1N494 DAN217 SEC1101C
Product Description
Full Text Search

K4E640412E - (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM

K4E640412E_6608618.PDF Datasheet

 
Part No. K4E640412E
Description (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM

File Size 235.92K  /  21 Page  

Maker


Samsung semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: K4E640412E-TC50
Maker: SAMSUNG(三星)
Pack: TSOP
Stock: 2120
Unit price for :
    50: $2.10
  100: $2.00
1000: $1.89

Email: oulindz@gmail.com

Contact us

Homepage http://www.samsung.com/Products/Semiconductor/
Download [ ]
[ K4E640412E Datasheet PDF Downlaod from Datasheet.HK ]
[K4E640412E Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for K4E640412E ]

[ Price & Availability of K4E640412E by FindChips.com ]

 Full text search : (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
 Product Description search : (K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM


 Related Part Number
PART Description Maker
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32
16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
SIEMENS AG
Infineon Technologies AG
IBM13M16734BCC 16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
IBM Microeletronics
IBM13M16734BCD 16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
IBM Microeletronics
TH58V128DC 128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia鈩?
Toshiba Semiconductor
TC58NS128ADC 128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
TOSHIBA
AS4SD16M72PBG-10_ET AS4SD16M72PBG-10_IT AS4SD16M72 16M x 72, SDR SDRAM MCP
16M X 72 SYNCHRONOUS DRAM, PBGA219 PLASTIC, PBGA-219
http://
Austin Semiconductor, Inc
Micross Components
MX23L1651MC-50G MX23L1651 MX23L1651HC-15 16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
MCNIX[Macronix International]
LH28F160S5H-L 16M-bit (2MB x 8/1MB x 16) Smart 5 Flash Memories(16M(2Mx 8/1Mx 16) Smart5 技术闪速存储器)
Sharp Corporation
MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
Micron Technology, Inc.
69F1608RPFH 69F1608RPFK 128 Megabit (16M x 8-Bit) Flash Memory Module 16M X 8 FLASH 5V PROM MODULE, 35 ns, DFP24
Maxwell Technologies, Inc
HYB3165405BTL-60 HYB3165405BTL-50 HYB3165405BTL-40 16M x 4 Bit 4k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
Infineon
SIEMENS[Siemens Semiconductor Group]
HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
16M x 72-Bit EDO-DRAM Module (ECC - Module)
From old datasheet system
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
 
 Related keyword From Full Text Search System
K4E640412E complimentary K4E640412E Switching K4E640412E voltage K4E640412E international K4E640412E Capacitor
K4E640412E описание K4E640412E 描述 K4E640412E Amplifiers K4E640412E planar K4E640412E reserved
 

 

Price & Availability of K4E640412E

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
2.0451629161835