PART |
Description |
Maker |
K4E640412E |
(K4E640412E / K4E660412E) 16M x 4bit CMOS Dynamic RAM
|
Samsung semiconductor
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
IBM13M16734BCB |
16M x 72 1 Bank Registered SDRAM Module(16M x 72 1组带寄存同步动态RAM模块)
|
IBM Microeletronics
|
MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位(100万16位)的CMOS闪存EEPROM的(1,600 EEPROM中的CMOS与非
|
Toshiba Corporation Toshiba, Corp.
|
V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块,缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
MBM29LV160T-80 MBM29LV160T-80PBT MBM29LV160T-80PBT |
FLASH MEMORY 16M (2M x 8/1M x 16) BIT CMOS 16M (2M x 8/1M x 16) bit
|
Fujitsu Microelectronics
|
HYB3165405BTL-60 HYB3165405BTL-50 HYB3165405BTL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-version)
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
N25Q128A13BF840E N25Q128A23BF840E N25Q128A33BF840E |
16M X 8 FLASH 3V PROM, PDSO16 16M X 8 FLASH 3V PROM, PBGA24 128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial flash memory with 108 MHz SPI bus interface
|
Numonyx B.V
|